Exciting developments in the field of nanoelectronics have emerged, as researchers have successfully demonstrated the potential of semiconducting epitaxial graphene (SEG) on single-crystal silicon carbide substrates. This breakthrough, detailed in a recent article published in Nature, showcases the remarkable properties of SEG, including a band gap of 0.6 eV and room temperature mobilities exceeding 5,000 cm2 V−1 s−1.

Over the past two decades, efforts to modify the bandgap of graphene have faced challenges, with attempts such as quantum confinement and chemical functionalization failing to produce viable semiconducting graphene. However, the development of SEG on silicon carbide substrates represents a significant advancement in the field of nanoelectronics.

Notably, the mobility of SEG is reported to be 10 times larger than that of silicon and 20 times larger than that of other two-dimensional semiconductors. This remarkable performance positions SEG as a promising candidate for various nanoelectronic applications.

The research team utilized a quasi-equilibrium annealing method to produce well-ordered SEG on macroscopic atomically flat terraces, aligning the SEG lattice with the SiC substrate. The resulting material exhibits exceptional chemical, mechanical, and thermal robustness, making it suitable for seamless integration and patterning using conventional semiconductor fabrication techniques.

These essential properties of SEG render it highly suitable for nanoelectronic applications, marking a significant milestone in the quest for viable semiconducting graphene. The successful demonstration of SEG’s potential opens up new possibilities for the development of advanced nanoelectronic devices, with implications for diverse technological domains.